KDW2503N features 5.5a,20v.r ds(on) = 0.021 @v gs =4.5v r ds(on) = 0.035 @v gs =2.5v fast switching speed high performance trench technology for extremely low r ds(on) extended vgss range ( 12v) for battery applications absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 20 v gate to source voltage v gs 12 v drain current continuous (note 1a) 5.5 a drain current pulsed 30 a power dissipation for single operation (note 1a) 1 power dissipation for single operation (note 1b) 0.6 operating and storage temperature t j ,t stg -55 to 175 thermal resistance junction to ambient (note 1a) r ja 125 /w thermal resistance junction to ambient (note 1b) r ja 208 /w i d p d w tssop-8 unit: mm smd type ic smd type ic product specification 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com
smd type ic smd type ic electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain-source breakdown voltage b vdss v gs =0v,i d =250 a 20 v breakdown voltage temperature coefficient i d =250 a, referenced to 25 14 mv/ zero gate voltage drain current i dss v ds =16v,v gs =0v 1 a gate-body leakage, forward i gssf v gs =12v,v ds = 0 v 100 na gate-body leakage, reverse i gssr v gs =-12v,v ds =0v -100 na gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 0.6 0.8 1.5 v gate threshold voltage temperature coefficient i d =250 a, referenced to 25 -3.2 mv/ v gs =4.5 v, i d =5.5 a 17 21 v gs =2.5v,i d =4.2a 24 35 v gs =4.5v,i d =5.5 a,tj = 125 23 34 on-state drain current i d(on) v gs =4.5v,v ds =5v 30 a forward transconductance g fs v ds =5v,i d =5.5a 26 s input capacitance c iss 1082 pf output capacitance c oss 277 pf reverse transfer capacitance c rss 130 pf turn-on delay time t d(on) 820 ns turn-on rise time tr 8 27 ns turn-off delay time t d(off) 24 38 ns turn-off fall time t f 816 ns total gate charge v gs =5v q g 12 17 nc gate-source charge q gs 2nc gate-drain charge q gd 3nc maximum continuous drain-source diode forward current i s 0.83 a drain-source diode forward voltage v sd v gs =0v,i s = 0.83 a (not 2) 0.7 1.2 v notes: 1r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. a) r ja is 125 /w(steadystate)whenmountedona1inch 2 copper pad on fr-4. b) r ja is 208 /w (steady state) when mounted on a minimum copper pad on fr-4. 2. pulse test: pulse width 300 s, duty cycle 2.0% v ds =10v,i d =5.5 a,v gs =4.5v(note 2) m r ds(on) static drain-source on-resistance v dd =10v,i d =1a,v gs =4.5v, r gen =6 v ds =10v,v gs =0v,f=1.0mhz KDW2503N smd type ic smd type ic product specification 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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